- S -
SAP
SCVM
SDM
SEMM
Scanning Evanescent Electro-Magnetic Microscope A
scanning microscope that uses near-field evanescent
electromagnetic waves to probe sample properties.
SEMM is capable of high resolution imaging
and quantitative measurements of the electrical properties
of the sample. SEMM can map dielectric constant,
tangent loss, conductivity, complex electrical impedance,
and other electrical parameters of materials.
US Pat. 6173604:
SFM
Scanning
Force Microscopy Shear
Force Microscopy Kind
of SPM with a distance regulation method relied on
the detection of shear forces between the end of a
probe and the sample of interest.
Appl. Phys. Lett. 60, 2484 (1992).
SFS
Scanning
Force Spectroscopy Measurement of the frictional force as a function
of the loading force Static
Force Spectroscopy Recording
the deflection of a cantilever as a function of the
tip-sample distance, as the tip approaches and retracts
from a sample surface. This method implies the assumption
of a quasistatic displacement.
SGM
Scanning gate microscopy The
biased tip locally modified the conducting properties of
the sample as it scans over it. SGM images this perturbation
by measuring the conductance of the sample as a function
of tip position. The conductance changes when the tip locally
depletes, or gates the underlying electron system. SGM
may also be used to determine whether the tip perturbs the
sample during an EFM measurement.
Phys. Rev. Lett. 84, 6082 (2000).
SICM
SIM
Scanning
Impedance Microscopy SIM
is a scanning probe technique based on the detection
of the phase change of cantilever oscillations induced
by a lateral bias applied to the sample. This technique
allows mapping of the local phase angle of complex
microstructures and is complemented by scanning surface
potential microscopy (SSPM).
The combination of SIM and SSPM
allows independent quantification of interface resistivity
and capacitance, thus providing spatially resolved
impedance spectra of complex microstructures.
Appl. Phys. Lett. 78, 1306 (2001).
SLAM
Scanning
Local-Acceleration Microscopy Scanning
Force Microscope operating at frequencies above
the highest tip–sample resonance. SLAM greatly
enhances the sensitivity of the microscope to materials’
properties.
J. Vac. Sci.Techn. B 14, 794 (1996).
The
most commonly used detection method, it involves driving
the cantilever at a fixed frequency
w slightly off resonance.
SMOKE
SMM
Scanning
Maxwell-Stress
Microscopy Appl. Phys. Lett. 78, 2560( 2001).
Scanning
Microdeformation Microscopy
Scanning
Microdeformation Microscopy is based on a vibrating
contact tip. Scanning the sample reveals surface topography
and mainly, subsurface elastic properties.
APL 62, 829, 1993
Scanning Microdeformation Microscopy is a form of
contact a.c. force microscopy using a tip size of
the order of a micron. The tip is mounted at the end
of the cantilever and vibrates in contact with the
sample. The system uses a resonance frequency and
enables quantitative material characterization at
any point of the sample surface.
Applied Physics A Materials Science &
Processing. Abstract Volume 66, Issue 7, S227 (1998).
Shear
Mode SCM Shear-mode
SCM is developed using an all-metallic probe, whose
distance from the sample is controlled by detecting
the shear-force drag on the laterally oscillating
probe. Using this SCM, a set of images of topography,
dC/dV, and dC/dX is simultaneously obtained.. The
SCM developed shows sensitivity for dC/dV higher than
the conventional SCM. The dC/dX image clearly indicates
the built-in depletion region due to the p-n junction.
Appl.Phys. Lett. 78, 2955 (2001).
Scanning Nonlinear Dielectric Microscopy Figure 1.(a) shows
a schematic configuration of the SNDM probe developed
for the simultaneous observation of surface morphology
and domain patterns of ferroelectric materials. A
conductive cantilever is used along with the SNDM
probe and AFM probe in order to carry out simultaneous
measurement. The SNDM probe consists of the tip, an
inductance element L, a capacitance element C0,
a feedback amplifier and a ring ground electrode which
compose the LC oscillator. Cs is the capacitance
between the tip and the ring-shaped ground electrode,
as shown in Figure 1 (b). The probe oscillates
at a resonant frequency
, where C0 represents a stray capacitor
in the electrical circuit. During the measurement,
an additional AC voltage Vp of much lower
frequency fa than f0 is applied
between the sample stage and the ring electrode. Since
the L is sufficiently small to conduct the AC voltage
to the tip, the additional voltage is applied between
the sample stage and the top of the tip. The applied
voltage Vp modulates the Cs
due to the nonlinear dielectric response whose sign
changes in accordance with the polarization of the
specimen under the tip. Therefore one can measure
the polarization of the specimen by measuring the
dynamic frequency deviation.
Figure 2.
is a schematic diagram of the system for simultaneous
observation of surface morphology and domain patterns.
Jap. J. Appl. Phys. 39, 3808 (2000).
SPE
SPM
Submarine
SFM The
SSFM is constructed as a standalone,
remote-controlled, and water-tight microscope that
can be put upside down into the water subphase of
a commercial LB trough. The SFM tip
therefore approaches the air/water interface from
underwater allowing the investigation of the LB chromophores.
J. Vac. Sci. Technol. B 14, 1387 (1996).
Scanning
Shear-Force Microscopy
SSPM
Scanning
Surface Potential Microscopy In SSPM the cantilever is not driven mechanically;
rather, the tip is biased directly by Vtip
= Vdc +Vaccos( wt), where Vac
is referred to as the driving voltage. The capacitive
force Fcap(z) between the tip and a surface
at potential V s is
F cap( z) = (1/2)(Vtip -Vs2
) (dC(z)/dz)
where C(z) is the tip-surface capacitance dependent
on tip geometry, surface topography and tip-surface
separation z. The first harmonic of the force is
Fcap1w(z) = (dC(z)/dz)(Vdc -
Vs) Vac
and feedback is used to nullify this term by adjusting
the constant component of the tip bias Vdc
. This condition is met when Vdc is equal to surface
potential and thus, mapping the nulling potential
Vdc yields a surface potential map.
Phys. Rev. B 63, 125411 (2000).
SSRM
SThM
Scanning Thermal Microscope SThM
is based upon a noncontacting near-field thermal probe.
Profiling is achieved by scanning the heated sensor
above but close to the surface of a solid. The conduction
of heat between tip and sample via the air provides
a means for maintaining the sample spacing constant
during the lateral scan.
Appl. Phys. Lett. 49, 1587 (1986).
STM-IETS
STS
SVET
S-UFM
swipping
Moving and remuving of small particles by the SPM
probe during imaging them.
Appl. Phys. Lett. 66, 3295 (1995).
SXM
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