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ODBE
Optical
Detection Ballistic Electrons
A spectroscopic technique which is based on ballistic
injection of minority carriers from the tip of a scanning-tunneling
microscope into a semiconductor heterostructure is
demonstrated. By analyzing the resulting electroluminescence
spectrum as a function of tip-sample bias, both the
injection barrier height and the carrier scattering
rate in the semiconductor can be determined. This
technique is complementary to ballistic electron
emission spectroscopy (BEES)since
minority instead of majority carriers are injected,
which give the opportunity to study the carrier trajectory
after injection.
Phys Rev. Lett. 86, 2404 (2001).
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