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 Bakhtizin Raouf Zagidovich
- Professor of Physics, Head of Physical Electronics
Department.
E-mail: raouf@bsu.bashedu.ru
Education: B.S., M.S., - Physics, Leningrad State
University, Physical Faculty, Leningrad (now Sankt-Petersburg), Russia (formerly
USSR) 1967; Ph.D., Physics of Semiconductors, Institute of Physics, Leningrad
State University, Leningrad (now Sankt-Petersburg), Russia (formerly USSR) 1972;
Dr. of Sci. (Phys. & Math) - Physical Electronics, Technical University of
Sverdlovsk (now Ekaterinburg), Russia 1989.
Professional experience:
Senior Lecturer - 1972
Assoc. Professor - 1976
Head of Phys.
Electronics Dept. - 1980
Professor of Physics - 1990 - Present.
Visiting
appinments in various universities in Germany, Sweden , China and
Japan.
Honors: State
Prize of Russian Federation on Science (1992),
Soros Professor (1997,
1998).
Member: Russian Physical
Society; American Physical Society; New York Academy of
Sciences.
Fellow: Russian
Institute of Electronics; Editorial Board for "Journal of Micromechanics &
Microengineering"; Steering Committee of the International Vacuum Electron
Sources.
Listed in "Marcus" Who's Who in the
World.
Scientific works: over 150 papers in refereed journals,
2 books and 20 inventions.
Topics of Scientific
Activities: Surface Science, STM, Field Emission, Vacuum
Microelectronics, Field Electron Emission Spectroscopy, Field Emission Noise.
List of selected publications during the last 3
years:
- R.Z. Bakhtizin, Ch. Park, T. Hashizume and T. Sakurai. "Scanning tunneling
microscopy study of the 3ґ1 reconstruction induced by Li adsorption on the
Si(111) surface". Appl. Surf. Sci. 1995. V. 87/88. P. 347-352.
- R.Z.
Bakhtizin, Ch. Park, T. Hashizume and T. Sakurai. "Investigation of the atomic
structure of Si(100) surface covered by submonolayer Bi film". JETP. 1995. V.
108. No. 3(9). P. 977-989 (in Russian).
- R.Z. Bakhtizin, J. Kishimoto, T.
Hashizume and T. Sakurai. "STM observation of ordered structures on the
Si(100)-2ґ1-Sr surface". Physics of Low-Dimensional Structures (PLDS). 1995. V.
12. P. 63-70.
- R.Z. Bakhtizin, J. Kishimoto, T. Hashizume and T. Sakurai.
"STM study of Sr adsorption on Si(100) surface". Appl. Surf. Sci. 1996. V.
94/95. P. 478-484.
- R.Z. Bakhtizin, J. Kishimoto, T. Hashizume and T. Sakurai.
"Scanning tunneling of Sr adsorption on the Si(100)-2ґ1 surface". Journal of
Vac. Sci. and Technol. B. 1996. V. 14(2). P. 1000-1004.
- R.Z. Bakhtizin,
R.N. Amirkhanov and S.S. Ghots. "Autocorrelation function of 1/f current
fluctuations in vacuum microelectronics devices". Journal of Vac. Sci. and
Technol. B. 1996. V. 14(3). P. 2135-2137.
- R.Z. Bakhtizin, T. Hashizume,
X.-D. Wang and T. Sakurai."Scanning tunneling microscopy of fullerenes on metal
and semiconductor surfaces" Physics-Uspekhi (Uspekhi Fizicheskhikh Nauk) 1997.
V. 167. No. 3. P. 289-307. (in Russian).
- R.Z. Bakhtizin, Ch. Park, T.
Hashizume and T. Sakurai. "Scanning tunneling microscopy study of Li adsorption
on the Si(111) surface". Physics of Low-Dimensional Structures (PLDS). 1997. V.
3/4. P. 39-48.
- R.Z. Bakhtizin, Qikun Xue, T. Hashizume and T. Sakurai.
"Atomic structures of gallium-rich GaAs(001)-4ґ2 and GaAs(001)-4ґ6 surfaces".
JETP. 1997. V. 111. No. 5. P. 1858-1868 (in Russian).
- R.Z. Bakhtizin,
Qikun Xue, T. Hashizume and T. Sakurai. "Atomic structures on a GaAs(001)
surface grown by molecular beam epitaxy". Physics-Uspekhi (Uspekhi Fizicheskhikh
Nauk) 1997. V. 167. No. 11. P. 1227-1241. (in Russian).
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Department of General Physics.