Institute of Analytical Instrument-making RAS

Alexander O.Golubok
Ph. D., Research Director golub@ianin.spb.su
Bulenko U.V.
Kurochkin D.V.
Monailov V.V.
Sapozhnikov I.D.

Work instruments: own produced STMs.

Tel.: ++7 (812) 251-7210
Tel.: ++7 (812) 251-2605
Fax: ++7 (812) 251-7038

Postal address: 26, Rizhski Pr., St. Peterburg, 198103, Russia.

Main publications:

1. A. O. Golubok, S. A. Masalov and N. A. Tarasov, Thermofield tip formation in UHV/STM combined with field-emission microscope, Ultramicroscopy, 42-44, P. 1574-1579 (1992).
2. A. O. Golubok and V. A. Timofeev, STM combined with SEM without SEM capability limitations, Ultramicroscopy, 42-44, P. 1558-1563 (1992).
3. A. O. Golubok, S. A. Vinogradova, S. Ya. Tipissev, A. Y. Borisov, A. S. Taisova, O. V. Kolomytkin, STM/STS study of photosynthetic bacterial membrane. Ultramicroscopy, 42-44, P. 1228-1235 (1992).
4. D. N. Davydov, A. O. Golubok and S. A. Rykov, Local tunneling spectroscopy ofn-PhTe surface, Ultramicroscopy, 42-44, P. 878-883 (1992).
5. A. O. Golubok, S. A. Vinogradova, S. Ya. Tipissev, Algorithms of Measuring, Processing and Interpretation of Data Obtained with Scanning Tunneling Microscope, Computers in Physics, v. 6 (4), p. 327 (1992).
6. N. N. Ledentsov, G. M. Gur'yanov, G. E. Tsyrlin, V. N. Petrov, Yu. B. Samsoncnko, A. O. Golubok, and S. Ya. Tipisev, Effect of heat -treatment conditions on the surface morphology of gallium arsenide grown on vicinal GaAs (100) substrates by molecular- beam epitaxy. Semiconductors, v. 28 (5), p. 526-527 (1994).
7. G. M. Guryanov, G. E. Cirlin, V. N. Petrov, N. K. Polyakov, A. O. Golubok, S. Ya. Tipissev, E. P. Musikhina, V. B. Gubanov, Yu. B. Samsonenko, N. N. Ledentsov, Formation of InGaAs/GaAs quantum dots by submonolayer molecular beam epitaxy. Surface Science, v.331-333, p.414-418 (1995).
8. G.E.Cirlin, G.M.Guryanov, A.O.Golubok, S.Ya.Tipissev, N.N.Ledentsov, P.S.Kop'ev, M.Grundmann, D.Bimberg, Ordering phenomena in laAs strained layer morphological transformation on GaAs(lOO) surface, Appl.Phys.Lett., v.67, p.97-99 (1995).
9. G.M.Guryanov, G.E.Cirlin, V.N.Petrov, N.K.Polyakov, A.O.Golubok, S.Ya.Tipisev, V.B.Gubanov, Yu.B.Samsonenko, N.N.Ledentsov, V.A.Shchukin, M.Grundmann, D.Bimberg, Zh.I.Alferov. STM and RHEED study of InAs/GaAs quantum dots obtained by submonolayer molecular beam epitaxial techniques. Surface Science, v.352-354, p.651-655 (1996).
10. G.M.Guryanov, G.E.Cirlin, A.O.Golubok, S.Ya.Tipisev, N.N.Ledentsov, V.A.Shchukin, M.Grundmann, D.Bimberg, Zh.I.Alferov, An intermediate (1.0-1.5 monolayers) stage of hcteroepitaxial growth of InAs (100) during submonolayer molecular beam epitaxy. Surface Science, v. 352-354, p. 646-650 (1996).
11. S. Ya. Tipissev and A. O. Golubok. Nanostep movement and measurement, Tribology International v. 29 (5), p. 373-376 (1996).
12. G. E. Cirlin, V. N. Petrov, V. G. Dubrovskii, A. O. Golubok, S. Ya. Tipissev, G.M.Giiryanov, M.V.Maximov, N.N.Ledentsov, D.Bimbcrg. Direct formation of InGaAs/GaAs quantum dots during submonolayer epitaxies from molecular beams, Czech. J. Phys., V.47(4) p.379-384 (1997).
13. G.li.Cirlin, V.N.Petrov, A.O.Golubok, S.Ya.Tipissev, V.G.Dubrovskii, G.M.Guryanov, N.N.Ledenlsov, D.Bimberg, Effect of growth kinetics on the InAs/GaAs quantum dot arrays formation on vicinal surfaces, Surface Science, v.377-379,p.895-898(1997).
14. G.E.Cirlin, V.G.Dubrovskii, V.N. Petrov, N.K. Polyakov, N.P.Komeeva, V.N.Demidov, A.O.Golubok, S.A.Masalov, D.V.Kurochkin, O.M.Gorbenko, N.l.Komyak, V.M.Ustinov, A.Yu.Egorov, A.R.Kovsh, M.V.Maximov, A.F.Tsatsul'nikov, B.V.Volovik, A.E.Zhukov, P.S.Kop'ev, Zh.I.AIferov, N.N.Ledentsov, M.Gmndmaiin and D.Bimbcrg. Formation of InAs quantum dots on a silicon (100) surface. Semiconductor Science Technology, p.1262-1265.